Version 3.0 (date built: in progress)
Version 2.33 (date built: 30. April 2021)
Version 2.32 (date built: 17. October 2017)
Version 2.31 (date built: 8. October 2015)
Version 2.3 (date built: 11. June 2009)
Version 2.25 (date built: 5. Dec 2006)
linearize step
Version 2.24 (date built: 5. Jan 2006)
c<name> <positive_node> <negative_node>
{[<model_name>] [[c[apacitance]=]{[<value>] [<expression>]}]}
[ctype=<value>] [ic=<value>] [l=<value>]
[w=<value>] [m=<value>]
<> ... user defined field
[] ... optional field
{} ... at least one filed must be specified
v<name> <positive_node> <negative_node>
[dc_definition] [ac_definition]
[transient_definition] distorsion_definition
[nolift=<value>] [m=<value>]
dc_definition = [dc= | dc] <value>
ac_definition = {ac[mag]= | ac[mag]}
<value> [[acphase= | acphase] <value>]
transient_definition = {pulse <u1> <u2> [<td>
[<tr> [<tf> [<tpw> [<tper>]]]]] |
sin[e] <u0> <ua> [<f> [<td> [<kd>]]] |
exp <u1> <u2> [<d1> [<t1>
[<td2> [<t2>]]]] |
pwl <t1> <u1> [<t2> <u2>[ ... ]] |
sffm <u0> <ua> [<f> [<mi>[<fs>]]]}
distorsion_definition = [{distof1= | distof1} <value>
[<value>]][{distof2= | distof2} <value>
[<value>]]
<> ... user defined field
[] ... optional field
{} ... at least one filed must be specified
Version 2.22 (date built: 2. November 2004)
eg (1.16 for tlev=2, 1.11 otherwise) energy gap for pn junction diode
gap1 (7.02e-4) first bandgap correction factor
gap2 (1108) second bandgap correction factor
phi (0.576036) surface potential
pta (alias for tpb) (0) temperature coefficient of pb
ptp (alias for tpbsw) (0) temperature coefficient of pbsw
ptc (0) fermi potential phi temperature coefficient
cta (alias for tcj) (0) temperature coefficient of cj
ctp (alias for tcjsw) (0) temperature coefficient of cjsw
tcv (0) threshold voltage temperature coefficient
Version 2.21 (date built: 6. May 2004)
if(abs(new - old) > tolerance) new = old +/- tolerance / sollim
sollimiter * itl1
jsw (0) sidewall saturation current per unit junction periphery
cj (alias for cjo) (0) zero-bias junction capacitance per unit junction bottomwall area
cjsw (0) zero-bias junction capacitance per unit junction periphery
php (vj) periphery junction contact potential
mjsw (0.33) periphery junction grading coefficient
fcs (0.5) coefficient for the forward-bias depletion periphery capacitance formula
l<name> <positive_node> <negative_node> [l=|inductance=]<value> [ic=<value>] [m=<value>]
<> ... user defined field
[] ... optional field
Version 2.20 (date built: 15. May 2003)
r<name> <positive_node> <negative_node> {[<model_name>]
[[r[esistance]=]<value>]}
[[tc[1]=]<value>] [[tc2=]<value>] [l=<value>]
[w=<value>] [temp=<value>] [m=<value>]
resistance model
res (0) default resistance
diode model
mj (alias for m) (0.5) area junction grading coefficient
MOS1 model
wd (0) lateral diffusion into channel width from bulk
xl (0) length bias accounts for masking and etching effects
xw (0) width bias accounts for masking and etching effects
delvto (alias for delvt0) (0) zero-bias treshold voltage shift
n (1) emission coefficient
bex (-1.5) low field mobility temperature exponent
MOS2 model
wd (0) lateral diffusion into channel width from bulk
xl (0) length bias accounts for masking and etching effects
xw (0) width bias accounts for masking and etching effects
delvto (alias for delvt0) (0) zero-bias treshold voltage shift
n (1) emission coefficient
utra (0) transverse field coefficient
bex (-1.5) low field mobility temperature exponent
MOS3 model
wd (0) lateral diffusion into channel width from bulk
xl (0) length bias accounts for masking and etching effects
xw (0) width bias accounts for masking and etching effects
delvto (alias for delvt0) (0) zero-bias treshold voltage shift
n (1) emission coefficient
bex (-1.5) low field mobility temperature exponent
bsim3v2 model
ld (alias for dl) (0) channel length reduction in meters
wd (alias for dw) (0) channel width reduction in meters
php (alias for pbsw) (1) source drain side junction capacitance built in potential
xl (0) channel length reduction in meters due to masking and etching effects
xw (0) channel width reduction in meters due to masking and etching effects
lmlt (1) length shrink factor
wmlt (1) diffusion layer and width shrink factor
rs (0) source ohmic resistance
rsc (0) additional source resistance due to contact resistance
rd (0) drain ohmic resistance
rdc (0) additional drain resistance due to contact resistance
jsw (0) sidewall bulk junction saturation current
is (1e-14) bulk junction saturation current
n (1) emission coefficient
cbd (0) zero bias bulk-drain junction capacitance
cbs (0) zero bias bulk-source junction capacitance
tt (0) transit time
bsim3v3 model
npeak (alias for nch) (1.7e17) channel doping concentration
n (alias for nj) (1) source/drain junction emission coefficient
php (alias for pbsw) (1) source/drain sidewall junction capacitance built in potential
ld (alias for lint) (0) length reduction parameter
wd (alias for wint) (0) width reduction parameter
xl (0) channel length reduction in meters due to masking and etching effects
xw (0) channel width reduction in meters due to masking and etching effects
lmlt (1) length shrink factor
wmlt (1) diffusion layer and width shrink factor
del (0) channel length reduction
rs (0) source ohmic resistance
rsc (0) additional source resistance due to contact resistance
rd (0) drain ohmic resistance
rdc (0) additional drain resistance due to contact resistance
is (1e-14) bulk junction saturation current
cbd (0) zero bias bulk-drain junction capacitance
cbs (0) zero bias bulk-source junction capacitance
tt (0) transit time
Version 2.10 (date built: 4. October 2001)
Version 2.03 (date built: 12. October 2000)
Version 2.02 (date built: 27. June 2000)
.global node1 node2 ...
Version 2.01 (date built: 16. May 2000)
Version 2.00 (date built: 7. April 2000)
Version 1.20 (date built: 17. December 1999)
Version 1.00 (date built: 18. October 1999)