//======================================================================================
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// Filename: PSP103_binning.include
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//
//  (c) Copyright notice
//
//  Since 2015 until today, PSP has been co-developed by NXP Semiconductors and
//  CEA-Leti. For this part of the model, each claim undivided ownership and copyrights
//  Since 2012 until 2015, PSP has been co-developed by NXP Semiconductors and
//  Delft University of Technology. For this part of the model, each claim undivided
//  ownership and copyrights
//  Until and including 2011, PSP has been co-developed by NXP Semiconductors and
//  Arizona State University. For this part of the model, NXP Semiconductors claims
//  undivided ownership and copyrights.
//
//
//  Version: 103.4.0 (PSP), 200.5.0 (JUNCAP), August 2016
//
//======================================================================================
//======================================================================================
//
// Further information can be found in the file releasenotesPSP103.txt
//
                        // auxiliary variables
                        iLEWE        =  iLE * iWE;
                        iiLE         =  LE / `LEN;
                        iiWE         =  WE / `WEN;
                        iiLEWE       =  iiLE * iiWE;
                        iiiLEWE      =  iiWE / iiLE;

                        // auxiliary variables for COX only
                        iiLEcv       =  LEcv / `LEN;
                        iiWEcv       =  WEcv / `WEN;
                        iiLEWEcv     =  iiLEcv * iiWEcv;

                        // auxiliary variables for CGOV only
                        iLEcv        = `LEN / LEcv;
                        iiiLEWEcv    =  iiWEcv / iiLEcv;

                        // auxiliary variables for CGBOV only
                        iiLcv        =  Lcv / `LEN;
                        iiWcv        =  Wcv / `WEN;
                        iiLWcv       =  iiLcv * iiWcv;

                        // auxiliary variables for CFR only
                        iLcv         =  `LEN / Lcv;
                        iiiLWcv      =   iiWcv / iiLcv;

                        // Process parameters
                        VFB_p        =  POVFB + iLE * PLVFB + iWE * PWVFB + iLEWE * PLWVFB;
                        STVFB_p      =  POSTVFB + iLE * PLSTVFB + iWE * PWSTVFB + iLEWE * PLWSTVFB;
                        TOX_p        =  POTOX;
                        EPSROX_p     =  POEPSROX;
                        NEFF_p       =  PONEFF + iLE * PLNEFF + iWE * PWNEFF + iLEWE * PLWNEFF;
                        FACNEFFAC_p  =  POFACNEFFAC + iLE * PLFACNEFFAC + iWE * PWFACNEFFAC + iLEWE * PLWFACNEFFAC;
                        GFACNUD_p    =  POGFACNUD + PLGFACNUD * iLE + PWGFACNUD * iWE + PLWGFACNUD * iLE * iWE;
                        VSBNUD_p     =  POVSBNUD;
                        DVSBNUD_p    =  PODVSBNUD;
                        VNSUB_p      =  POVNSUB;
                        NSLP_p       =  PONSLP;
                        DNSUB_p      =  PODNSUB;
                        DPHIB_p      =  PODPHIB + iLE * PLDPHIB + iWE * PWDPHIB + iLEWE * PLWDPHIB;
                        DELVTAC_p    =  PODELVTAC + iLE * PLDELVTAC + iWE * PWDELVTAC + iLEWE * PLWDELVTAC;
                        NP_p         =  PONP + iLE * PLNP + iWE * PWNP + iLEWE * PLWNP;
                        CT_p         =  POCT + iLE * PLCT + iWE * PWCT + iLEWE * PLWCT;
                        TOXOV_p      =  POTOXOV;
                        TOXOVD_p     =  POTOXOVD;
                        NOV_p        =  PONOV + iLE * PLNOV + iWE * PWNOV + iLEWE * PLWNOV;
                        NOVD_p       =  PONOVD + iLE * PLNOVD + iWE * PWNOVD + iLEWE * PLWNOVD;

                        // DIBL parameters
                        CF_p         =  POCF + iLE * PLCF + iWE * PWCF + iLEWE * PLWCF;
                        CFD_p        =  POCFD;
                        CFB_p        =  POCFB;
                        
                        // Subthreshold slope parameters of short channel transistor
                        PSCE_p       =  POPSCE + iLE * PLPSCE + iWE * PWPSCE + iLEWE * PLWPSCE;
                        PSCEB_p      =  POPSCEB;
                        PSCED_p      =  POPSCED;

                        // Mobility parameters
                        BETN_p       =  iiWE * iLE * (POBETN + iLE * PLBETN + iWE * PWBETN + iLEWE * PLWBETN);
                        STBET_p      =  POSTBET + iLE * PLSTBET + iWE * PWSTBET + iLEWE * PLWSTBET;
                        MUE_p        =  POMUE + iLE * PLMUE + iWE * PWMUE + iLEWE * PLWMUE;
                        STMUE_p      =  POSTMUE;
                        THEMU_p      =  POTHEMU;
                        STTHEMU_p    =  POSTTHEMU;
                        CS_p         =  POCS + iLE * PLCS + iWE * PWCS + iLEWE * PLWCS;
                        STCS_p       =  POSTCS;
                        XCOR_p       =  POXCOR + iLE * PLXCOR + iWE * PWXCOR + iLEWE * PLWXCOR;
                        STXCOR_p     =  POSTXCOR;
                        FETA_p       =  POFETA;

                        // Series resistance parameters
                        RS_p         =  PORS + iLE * PLRS + iWE * PWRS + iLEWE * PLWRS;
                        STRS_p       =  POSTRS;
                        RSB_p        =  PORSB;
                        RSG_p        =  PORSG;

                        // Velocity saturation parameters
                        THESAT_p     =  POTHESAT + iLE * PLTHESAT + iWE * PWTHESAT + iLEWE * PLWTHESAT;
                        STTHESAT_p   =  POSTTHESAT + iLE * PLSTTHESAT + iWE * PWSTTHESAT + iLEWE * PLWSTTHESAT;
                        THESATB_p    =  POTHESATB + iLE * PLTHESATB + iWE * PWTHESATB + iLEWE * PLWTHESATB;
                        THESATG_p    =  POTHESATG + iLE * PLTHESATG + iWE * PWTHESATG + iLEWE * PLWTHESATG;

                        // Saturation voltage parameters
                        AX_p         =  POAX + iLE * PLAX + iWE * PWAX + iLEWE * PLWAX;

                        // Channel length modulation (CLM) parameters
                        ALP_p        =  POALP + iLE * PLALP + iWE * PWALP + iLEWE * PLWALP;
                        ALP1_p       =  POALP1 + iLE * PLALP1 + iWE * PWALP1 + iLEWE * PLWALP1;
                        ALP2_p       =  POALP2 + iLE * PLALP2 + iWE * PWALP2 + iLEWE * PLWALP2;
                        VP_p         =  POVP;

                        // Impact ionization parameters
                        A1_p         =  POA1 + iLE * PLA1 + iWE * PWA1 + iLEWE * PLWA1;
                        A2_p         =  POA2;
                        STA2_p       =  POSTA2;
                        A3_p         =  POA3 + iLE * PLA3 + iWE * PWA3 + iLEWE * PLWA3;
                        A4_p         =  POA4 + iLE * PLA4 + iWE * PWA4 + iLEWE * PLWA4;
                        GCO_p        =  POGCO;

                        // Gate current parameters
                        IGINV_p      =  POIGINV + iiLE * PLIGINV + iiWE * PWIGINV + iiLEWE * PLWIGINV;
                        IGOV_p       =  POIGOV + iLE * PLIGOV + iiWE * PWIGOV + iiiLEWE * PLWIGOV;
                        IGOVD_p      =  POIGOVD + iLE * PLIGOVD + iiWE * PWIGOVD + iiiLEWE * PLWIGOVD;
                        STIG_p       =  POSTIG;
                        GC2_p        =  POGC2;
                        GC3_p        =  POGC3;
                        CHIB_p       =  POCHIB;

                        // Gate-induced drain leakage (GIDL) parameters
                        AGIDL_p      =  POAGIDL + iLE * PLAGIDL + iiWE * PWAGIDL + iiiLEWE * PLWAGIDL;
                        AGIDLD_p     =  POAGIDLD + iLE * PLAGIDLD + iiWE * PWAGIDLD + iiiLEWE * PLWAGIDLD;
                        BGIDL_p      =  POBGIDL;
                        BGIDLD_p     =  POBGIDLD;
                        STBGIDL_p    =  POSTBGIDL;
                        STBGIDLD_p   =  POSTBGIDLD;
                        CGIDL_p      =  POCGIDL;
                        CGIDLD_p     =  POCGIDLD;

                        // Charge model parameters
                        COX_p        =  POCOX + iiLEcv * PLCOX + iiWEcv * PWCOX + iiLEWEcv * PLWCOX;
                        CGOV_p       =  POCGOV + iLEcv * PLCGOV + iiWEcv * PWCGOV + iiiLEWEcv * PLWCGOV;
                        CGOVD_p      =  POCGOVD + iLEcv * PLCGOVD + iiWEcv * PWCGOVD + iiiLEWEcv * PLWCGOVD;
                        CGBOV_p      =  POCGBOV + iiLcv * PLCGBOV + iiWcv * PWCGBOV + iiLWcv * PLWCGBOV;
                        CFR_p        =  POCFR + iLcv * PLCFR + iiWcv * PWCFR + iiiLWcv * PLWCFR;
                        CFRD_p       =  POCFRD + iLcv * PLCFRD + iiWcv * PWCFRD + iiiLWcv * PLWCFRD;

                        // Noise model parameters
                        FNT_p        =  POFNT;
                        FNTEXC_p     =  iLE * iLE * (POFNTEXC + iLE * PLFNTEXC + iWE * PWFNTEXC + iLEWE * PLWFNTEXC);
                        NFA_p        =  PONFA + iLE * PLNFA + iWE * PWNFA + iLEWE * PLWNFA;
                        NFB_p        =  PONFB + iLE * PLNFB + iWE * PWNFB + iLEWE * PLWNFB;
                        NFC_p        =  PONFC + iLE * PLNFC + iWE * PWNFC + iLEWE * PLWNFC;
                        EF_p         =  POEF;

                        // Edge transistor: PSP 103.4
                        VFBEDGE_p    =  POVFBEDGE;
                        STVFBEDGE_p  =  POSTVFBEDGE + iLE * PLSTVFBEDGE + iWE * PWSTVFBEDGE + iLEWE * PLWSTVFBEDGE;
                        DPHIBEDGE_p  =  PODPHIBEDGE + iLE * PLDPHIBEDGE + iWE * PWDPHIBEDGE + iLEWE * PLWDPHIBEDGE;
                        NEFFEDGE_p   =  PONEFFEDGE + iLE * PLNEFFEDGE + iWE * PWNEFFEDGE + iLEWE * PLWNEFFEDGE;
                        CTEDGE_p     =  POCTEDGE + iLE * PLCTEDGE + iWE * PWCTEDGE + iLEWE * PLWCTEDGE;
                        BETNEDGE_p   =  iLE * (POBETNEDGE + iLE * PLBETNEDGE + iWE * PWBETNEDGE + iLEWE * PLWBETNEDGE);
                        STBETEDGE_p  =  POSTBETEDGE + iLE * PLSTBETEDGE + iWE * PWSTBETEDGE + iLEWE * PLWSTBETEDGE;
                        PSCEEDGE_p   =  POPSCEEDGE + iLE * PLPSCEEDGE + iWE * PWPSCEEDGE + iLEWE * PLWPSCEEDGE;
                        PSCEBEDGE_p  =  POPSCEBEDGE;
                        PSCEDEDGE_p  =  POPSCEDEDGE;
                        CFEDGE_p     =  POCFEDGE + iLE * PLCFEDGE + iWE * PWCFEDGE + iLEWE * PLWCFEDGE;
                        CFDEDGE_p    =  POCFDEDGE;
                        CFBEDGE_p    =  POCFBEDGE;
                        FNTEDGE_p    =  POFNTEDGE;
                        NFAEDGE_p    =  PONFAEDGE + iLE * PLNFAEDGE + iWE * PWNFAEDGE + iLEWE * PLWNFAEDGE;
                        NFBEDGE_p    =  PONFBEDGE + iLE * PLNFBEDGE + iWE * PWNFBEDGE + iLEWE * PLWNFBEDGE;
                        NFCEDGE_p    =  PONFCEDGE + iLE * PLNFCEDGE + iWE * PWNFCEDGE + iLEWE * PLWNFCEDGE;
                        EFEDGE_p     =  POEFEDGE;

                        // Well proximity effect parameters
                        KVTHOWE      =  POKVTHOWE + iLE * PLKVTHOWE + iWE * PWKVTHOWE + iLEWE * PLWKVTHOWE;
                        KUOWE        =  POKUOWE + iLE * PLKUOWE + iWE * PWKUOWE + iLEWE * PLWKUOWE;
